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| MOSFET SMD Diodes Specialist 2N7002-G (N-Channel) RoHS Device Features Power dissipation : 0.35W SOT-23 0.119(3.00) 0.110(2.80) Equivalent Circuit 0.056(1.40) 0.047(1.20) D D G S 0.083(2.10) 0.066(1.70) 0.006(0.15) 0.002(0.05) G S G : Gate S : Source D : Drain 0.044(1.10) 0.035(0.90) 0.103(2.60) 0.086(2.20) Maximum Ratings (at TA=25C) Parameter Drain-Source voltage Drain current Power dissipation Junction and storage temperature Symbol VDS ID PD TJ, TSTG Value 60 250 350 -55 ~ +150 Unit V mA mW C 0.020(0.50) 0.013(0.35) 0.006(0.15)max 0.007(0.20)min Dimensions in inches and (millimeter) Electrical Characteristics (at TA=25C unless otherwise noted) Parameter Drain-Source breakdown voltage Gate-Threshold voltage Gate-body leakage Zero gate voltage drain current VDS=60V, VGS=0V, TJ=125C VGS=10V, VDS=7.5V On-state drain current VGS=4.5V, VDS=10V VGS=10V, ID=250mA Drain-Source on resistance VGS=4.5V, ID=200mA Forward tran conductance Diode forward voltage Total gate charge Gate-Source charge Gate-Drain charge Input capacitance Output capacitance Reverse transfer capacitance Turn-on time Turn-off time VDD=30V, RL=200 ID=100mA, VGEN=10V RG=10 VDS=25V, VGS=0V, f=1MHz VDS=30V, VGS=10V, ID=250mA VDS=15V, ID=200mA IS=200mA, VGS=0V gts VSD Qg Qgs Qgd Ciss COSS CrSS td(ON) tr td(off) rDS(ON) 2.0 300 0.85 0.6 0.06 0.06 25 6 1.2 7.5 6 7.5 20 20 nS pF 1.2 1.0 nC 4 mS V ID(ON) 500 700 1.5 3 Conditions VGS=0V, ID=10A VDS=VGS, ID=250A VDS=0V, VGS=15V VDS=60V, VGS=0V Symbol V(BR)DSS Vth(GS) IGSS IDSS Min 60 1 Typ 70 Max Unit V 1.5 2.5 10 1 A nA 500 800 1300 mA REV:B QW-BTR12 Page 1 Comchip Technology CO., LTD. MOSFET SMD Diodes Specialist RATING AND CHARACTERISTIC CURVES (2N7002-G) Fig.1 On-Region Characteristics 1.0 VGS=10V 9.0V 8.0V 7.0V 6.5V 6.0V 4.5V 4.0V 3.5V 3.0V 2.5V 2.0/1.0V Fig.2 On-Resistance vs Drain Current 7 O TJ= 25C ID, Drain-Source Current (A) 0.8 RDS(ON), Normalized Drain-Source On-Resistance 6 VGS = 5.0V 5 4 3 2 1 0 VGS = 10V 0.6 5.5V 5.0V 0.4 0.2 0 0 1 2 3 4 5 0 0.2 0.4 0.6 0.8 1.0 VDS, Drain-Source Voltage(V) ID, Drain Current (A) Fig.3 On-Resistance vs Junction Temperature 2.0 Fig.4 On-Resistance vs Gate-Source Voltage 6 RDS(ON), Normalized Drain-Source On-Resistance RDS(ON), Normalized Drain-Source On-Resistance 5 1.5 VGS=10V, ID=0.5A 4 ID = 500mA VGS=5V, ID=0.05A 1.0 3 ID = 50mA 2 0.5 1 0 -55 0 -30 -5 20 45 70 95 O 120 145 0 2 4 6 8 10 12 14 16 18 TJ, Junction Temperature ( C) VGS, Gate to Source Voltage (V) REV:B QW-BTR12 Page 2 Comchip Technology CO., LTD. MOSFET SMD Diodes Specialist Reel Taping Specification P0 P1 d Index hole E T F B P A W C 12 0 o D2 D1 D W1 Trailer ....... ....... 10 pitches (min) Device ....... ....... ....... ....... Leader ....... ....... 10 pitches (min) End Start Direction of Feed SYMBOL A 3.10 0.10 0.122 0.004 B 2.85 0.10 0.112 0.004 C 1.40 0.10 0.055 0.004 d 1.55 0.10 0.061 0.004 D 178 1 7.008 0.04 D1 50.0 MIN. 1.969 MIN. D2 13.0 0.20 0.512 0.008 SOT-23 (mm) (inch) SYMBOL E 1.75 0.10 0.069 0.004 F 3.50 0.05 0.138 0.002 P 4.00 0.10 0.157 0.004 P0 4.00 0.10 0.157 0.004 P1 2.00 0.05 0.079 0.002 W 8.00 0.30 0.315 0.012 W1 14.4 MAX. 0.567 MAX. SOT-23 (mm) (inch) REV:B QW-BTR12 Page 3 Comchip Technology CO., LTD. MOSFET SMD Diodes Specialist Marking Code 3 Part Number 2N7002-G Marking Code 7002 7002 1 2 Suggested PAD Layout SOT-23 SIZE (mm) A B C D 0.80 1.90 2.02 2.82 (inch) 0.031 C D A 0.075 0.080 0.111 B Standard Package Qty per Reel Case Type (Pcs) SOT-23 3000 Reel Size (inch) 7 REV:B QW-BTR12 Page 4 Comchip Technology CO., LTD. |
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